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25P06
Discrete Semiconductor Products

18N20

Active
Goford Semiconductor

N 200V, RD(MAX)<0.16@10V,VTH1.0V

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25P06
Discrete Semiconductor Products

18N20

Active
Goford Semiconductor

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification18N20
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)18 nC
Input Capacitance (Ciss) (Max)847 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)65.8 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V, 20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 1.481m+
10$ 0.93
100$ 0.62
500$ 0.49
1000$ 0.44
Digi-Reel® 1$ 1.481m+
10$ 0.93
100$ 0.62
500$ 0.49
1000$ 0.44
N/A 1717$ 1.471m+
Tape & Reel (TR) 2500$ 0.361m+
2500$ 0.38
5000$ 0.36
12500$ 0.34
15000$ 0.33
25000$ 0.34
30000$ 0.30

CAD

3D models and CAD resources for this part

Description

General part information

18N20

N-Channel 200 V 18A (Tc) 65.8W (Tc) Surface Mount TO-252

Documents

Technical documentation and resources