Coming soonZenode’s new Cross Ref’s tool! RSVP for the webinar here
Zenode.ai Logo
18N20
Discrete Semiconductor Products

18N20

Active
Goford Semiconductor

N 200V, RD(MAX)<0.16@10V,VTH1.0V

18N20
Discrete Semiconductor Products

18N20

Active
Goford Semiconductor

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Technical Specifications

Parameters and characteristics for this part

Specification18N20
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)18 nC
Input Capacitance (Ciss) (Max)847 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)65.8 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V, 30 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTape & Reel (TR) 2500$ 0.38<4d
15000$ 0.35
30000$ 0.31

CAD

3D models and CAD resources for this part

Description

General part information

18N20

N-Channel 200 V 18A (Tc) 65.8W (Tc) Surface Mount TO-252

Documents

Technical documentation and resources