Analog Devices

The ADRF5141 is a reflective, SPDT switch manufactured in the silicon process. The ADRF5141 is used in transmit and receive applications with an integrated power limiter on the receive path.The ADRF5141 operates from 6 GHz to 12 GHz. The RX arm with the integrated power limiter has a flat leakage of 17 dBm with a low insertion loss of 1.4 dB at 8 GHz to 11 GHz. The TX arm has an insertion loss of 0.9 dB at 8 GHz to 11 GHz.The ADRF5141 draws a low current of 13 μA on the positive supply of +3.3 V and 360 μA on the negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5141 requires no additional driver circuitry, making it an ideal alternative to gallium nitride (GaN) and PIN diode-based switches.The ADRF5141 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSX-band communications and radarsElectronic warfareSatellite communicationsGaN and PIN diode replacement

The ADRF5142 is a reflective single-pole, double-throw (SPDT) switch manufactured in the silicon process.The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB typical insertion loss and a 40 dB typical isolation. The device has a radio frequency (RF) input power handling capability of 41 dBm average power and 46 dBm peak power for the insertion loss path.The ADRF5142 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5142 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and operates from −40°C to +85°C.

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.ApplicationsWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDDpin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5300 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSIndustrial scannerTest instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)

The ADRF5301 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5301 was developed for 5G applications from 37 GHz to 49 GHz. This device has a low insertion loss of 1.4 dB, high isolation of 30 dB, and RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5301 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V applied to the VDD pin. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible control.The ADRF5301 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array package and can operate from −40°C to +105°C.ApplicationsIndustrial scannerTest instrumentationCellular infrastructure mmWave 5GMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)

The ADRF5515 is a dual-channel, integrated RF, front-end, multichip module designed for time division duplexing (TDD) applications. The device operates from 3.3 GHz to 4.0 GHz. The ADRF5515 is configured in dual channels with a cascading, two-stage, LNA and a high power silicon SPDT switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.0 dB and a high gain of 33 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides low insertion loss of 0.45 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation.The ADRF5515 is pin-compatible with the ADRF5545A, 10 W version, which operates from 2.4 GHz to 4.2 GHz.The ADRF5515 does not require any matching components at the RF ports that are internally matched to 50 Ω. The ANT and TERM ports are also internally ac-coupled. Therefore, only receiver ports require external dc blocking capacitors.The device comes in an RoHS compliant, compact, 6 mm×6 mm, 40-lead LFCSP package.ApplicationsWireless infrastructureTDD massive multiple input and multiple output and active antenna systemsTDD-based communications systems

The ADRF5532 is an integrated RF, front-end multichip module designed for time division duplex (TDD) applications. The device operates from 2.3 GHz to 2.7 GHz. The ADRF5532 is configured with a low-noise amplifier (LNA) and a high-power, silicon, single pole double throw (SPDT) switch.In the receive operation at 2.6 GHz, the LNA offers a low noise figure (NF) of 1.2 dB and a high gain of 35.5 dB with a third order input intercept point (IIP3) of −4 dBm.In the transmit operation, the switch provides a low insertion loss of 0.7 dB and handles a long-term evolution (LTE) average power of 36.5 dBm for a full lifetime operation (8 dB peak to average ratio (PAR)) and 39 dBm for a single event (<10 sec) LNA protection operation.The device is featured in an RoHS compliant, compact, 5 mm × 3 mm, 24-lead LFCSP package.APPLICATIONSWireless infrastructureTDD massive multiple input and multiple output (MIMO) and active antenna systemsTDD-based communication systems

The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10 sec) LNA protection operation.The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.ApplicationsWireless infrastructureTDD massive multiple input and multiple output and active antenna systemsTDD-based communication systems

The ADRF5549 is a dual-channel, integrated, RF front-end multichip module designed for time division duplexing (TDD) applications that operates from 1.8 GHz to 2.8 GHz. The ADRF5549 is configured in dual channels with a cascading, two-stage, low noise amplifier (LNA) and a high power, silicon single-pole, double-throw (SPDT) switch.In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure of 1.4 dB and a high gain of 35 dB with an output third-order intercept point (OIP3) of 32 dBm typical.In low gain mode, one stage of the two-stage LNA is in bypass mode providing 17 dB of gain at a lower current of 35 mA. In power-down mode, the LNAs are turned off, and the device draws 12 mA.In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.6 dB and handles a long-term evolution (LTE) full lifetime average (9 dB peak to average ratio (PAR)) of 40 dBm and 43 dBm for a 9 dB PAR LTE single event (<10 sec) average. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead, lead frame chip-scale package (LFCSP).ApplicationsWireless InfrastructureTDD massive multiple input and multiple output (MIMO) and active antenna systemsTDD-based communication systems