ADRF5300 Series

Catalog

RF SWITCH, SILICON, SPDT, 24 TO 32 GHZ, 3.15 V TO 3.45 V SUPPLY, -40 TO 105 °C, LGA-EP-20

Part	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Circuit	IIP3	Insertion Loss	Impedance	Mounting Type	Isolation	RF Type	Operating Temperature [Min]	Operating Temperature [Max]	Test Frequency	Package / Case	Frequency Range [Max]	Frequency Range [Min]
Analog Devices ADRF5300BCCZN	3.45 V	3.15 V	20-LGA (3x3)	SPDT	65 dBm	1.1 dB	50 Ohms	Surface Mount	38 dB	General Purpose	-40 °C	105 ░C	32 GHz	20-VFLGA Exposed Pad	32 GHz	24 GHz

Catalog

Key Features

• Reflective design

• Low insertion loss: 1.1 dB

• High isolation: 38 dB

• High input linearityP0.1dB: 37 dBmIP3: 65 dBm

• P0.1dB: 37 dBm

• IP3: 65 dBm

• RF settling time (0.1 dB final RF output): 70 ns

• High RF power handling28 dBm average36 dBm peak

• 28 dBm average

• 36 dBm peak

• 3.3 V single-supply operationInternal negative voltage generator

• Internal negative voltage generator

• 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array package

Description

The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDDpin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5300 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSIndustrial scannerTest instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)