ADRF5160 Series
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
Manufacturer: Analog Devices
Catalog
High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz
Key Features
• Reflective, 50 Ω design
• Low insertion loss: 0.7 dB typical to 2.0 GHz
• High power handling at TCASE= 105°CLong term (>10 years) averageCW power: 43 dBmPeak power: 49 dBmLTE average power (8 dB PAR): 41 dBmSingle event (<10 sec) averageLTE average power (8 dB PAR): 44 dBm
• Long term (>10 years) averageCW power: 43 dBmPeak power: 49 dBmLTE average power (8 dB PAR): 41 dBm
• CW power: 43 dBm
• Peak power: 49 dBm
• LTE average power (8 dB PAR): 41 dBm
• Single event (<10 sec) averageLTE average power (8 dB PAR): 44 dBm
• LTE average power (8 dB PAR): 44 dBm
• High linearityP0.1dB: 47 dBm typicalIP3: 70 dBm typical
• P0.1dB: 47 dBm typical
• IP3: 70 dBm typical
• ESD ratingsHBM: 4 kV, (Class 3A)CDM: 1.25 kV
• HBM: 4 kV, (Class 3A)
• CDM: 1.25 kV
• Single positive supply: 5 V
• Positive control, CMOS/TTL compatible
• 32-lead, 5 mm × 5 mm LFCSP package
Description
AI
The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.ApplicationsWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement
