ADRF5142 Series

High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz

Catalog

High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz

Part	Supplier Device Package	Features	Operating Temperature [Min]	Operating Temperature [Max]	IIP3	Test Frequency	Isolation	Circuit	Insertion Loss	Mounting Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Frequency Range [Max]	Frequency Range [Min]	Package / Case	Impedance	Topology	RF Type
Analog Devices ADRF5142BCCZN	20-LGA (3x3)	DC Blocked	-40 °C	85 °C	70 dBm	11 GHz	40 dB	SPDT	1.2 dB	Surface Mount	-3.15 V 3.45 V	-3.45 V 3.15 V	11 GHz	8 GHz	20-VFLGA Exposed Pad	50 Ohms	Reflective	Radar

Catalog

High Power, 40 W Peak, Silicon SPDT, Reflective Switch, 8 GHz to 11 GHz

Key Features

• Frequency range: 8 GHz to 11 GHz

• Low insertion loss: 1.2 dB (typical)

• High isolation: 40 dB (typical)High input linearity0.1 dB power compression (P0.1dB): 46 dBmThird-order intercept (IP3): 70 dBm

• High input linearity

• 0.1 dB power compression (P0.1dB): 46 dBm

• Third-order intercept (IP3): 70 dBm

• High power handling at TCASE= 85°C:Insertion loss pathAverage: 41 dBmPulsed (> 100 ns pulse width, 15% duty cycle): 44 dBmPeak (≤ 100 ns peak duration, 5% duty cycle): 46 dBmHot switching at RFC (Pin 3): 41 dBm

• Insertion loss pathAverage: 41 dBmPulsed (> 100 ns pulse width, 15% duty cycle): 44 dBmPeak (≤ 100 ns peak duration, 5% duty cycle): 46 dBm

• Average: 41 dBm

• Pulsed (> 100 ns pulse width, 15% duty cycle): 44 dBm

• Peak (≤ 100 ns peak duration, 5% duty cycle): 46 dBm

• Hot switching at RFC (Pin 3): 41 dBm

• Fast switching time: 60 ns

• 0.1 dB RF settling time: 65 ns

• No low frequency spurious

• Positive control interface: CMOS-/LVTTL-compatible

• 20-lead, 3.0 mm × 3.0 mm LGA package

• Pin compatible with ADRF5141 and ADRF5144

Description

The ADRF5142 is a reflective single-pole, double-throw (SPDT) switch manufactured in the silicon process.The ADRF5142 operates from 8 GHz to 11 GHz with a 1.2 dB typical insertion loss and a 40 dB typical isolation. The device has a radio frequency (RF) input power handling capability of 41 dBm average power and 46 dBm peak power for the insertion loss path.The ADRF5142 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/lowvoltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5142 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.The ADRF5142 comes in a 20-lead, 3.0 mm × 3.0 mm, RoHS-compliant, land grid array (LGA) package and operates from −40°C to +85°C.