CSD85312Q3E Series

20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm

Catalog

20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm

Part	Vgs(th) (Max) @ Id	Package / Case	Configuration	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD85312Q3E	1.4 V	8-PowerVDFN	2 N-Channel (Dual) Common Source	2390 pF	5V Drive Logic Level Gate	2.5 W	Surface Mount	12.4 mOhm	15.2 nC	20 V	39 A	MOSFET (Metal Oxide)	8-VSON (3.3x3.3)	-55 °C	150 °C

Catalog

20-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3, 14 mOhm

Key Features

• Common Source ConnectionLow Drain to Drain On-ResistanceSpace Saving SON 3.3 × 3.3 mm PlasticPackageOptimized for 5 V Gate DriveLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeCommon Source ConnectionLow Drain to Drain On-ResistanceSpace Saving SON 3.3 × 3.3 mm PlasticPackageOptimized for 5 V Gate DriveLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen Free

Description

The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications. The CSD85312Q3E is a 20 V common-source, dual N-channel device designed for adaptor or USB input protection. This SON 3.3 × 3.3 mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.