CSD86311W1723 Series

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Configuration	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	FET Feature
Texas Instruments CSD86311W1723	4 nC	Surface Mount	2 N-Channel (Dual)	MOSFET (Metal Oxide)	585 pF	4.5 A	-55 °C	150 °C	25 V	12-UFBGA DSBGA	1.5 W	39 mOhm	12-DSBGA	1.4 V	Logic Level Gate

Catalog

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Key Features

• Dual N-Ch MOSFETsCommon Source ConfigurationSmall Footprint 1.7 mm × 2.3 mmUltra Low Qgand QgdPb FreeRoHS CompliantHalogen FreeAPPLICATIONSBattery ManagementBattery ProtectionDC-DC ConvertersDual N-Ch MOSFETsCommon Source ConfigurationSmall Footprint 1.7 mm × 2.3 mmUltra Low Qgand QgdPb FreeRoHS CompliantHalogen FreeAPPLICATIONSBattery ManagementBattery ProtectionDC-DC Converters

Description

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications