CSD85301Q2 Series

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Catalog

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Part	Technology	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	FET Feature	Power - Max [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD85301Q2	MOSFET (Metal Oxide)	27 mOhm	-55 °C	150 °C	20 V	5.4 nC	2 N-Channel (Dual)	5 A	5V Drive Logic Level Gate	2.3 W	1.2 V	6-WSON (2x2)	Surface Mount	469 pF

Catalog

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection

Key Features

• Low on-resistanceDual independent MOSFETsSpace saving SON 2mm × 2mm plastic packageOptimized for 5V gate driverAvalanche ratedPb and halogen freeRoHS compliantLow on-resistanceDual independent MOSFETsSpace saving SON 2mm × 2mm plastic packageOptimized for 5V gate driverAvalanche ratedPb and halogen freeRoHS compliant

Description

The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications. The CSD85301Q2 is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.