CSD83325L Series

12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

Catalog

12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Mounting Type
Texas Instruments CSD83325LT	-55 °C	150 °C	6-XFBGA	1.25 V	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	10.9 nC	12 V	6-PicoStar	2.3 W	Surface Mount
Texas Instruments CSD83325L	-55 °C	150 °C	6-XFBGA	1.25 V	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	10.9 nC	12 V	6-PicoStar	2.3 W	Surface Mount

Catalog

12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

Key Features

• Common drain configurationLow-on resistanceSmall footprint of 2.2 mm × 1.15 mmLead freeRoHS compliantHalogen freeGate ESD protectionCommon drain configurationLow-on resistanceSmall footprint of 2.2 mm × 1.15 mmLead freeRoHS compliantHalogen freeGate ESD protection

Description

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices. This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.