CSD85302L Series

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Catalog

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Configuration	Technology
Texas Instruments CSD85302L	-55 °C	150 °C	4-PICOSTAR	1.31	1.31	Surface Mount	4-XFLGA	7.8 nC	1.7 W	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)

Catalog

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Key Features

• Common Drain ConfigurationLow On-ResistanceSmall Footprint of 1.35 mm × 1.35 mmPb Free and Halogen FreeRoHS CompliantESD HBM Protection >2.5 kVCommon Drain ConfigurationLow On-ResistanceSmall Footprint of 1.35 mm × 1.35 mmPb Free and Halogen FreeRoHS CompliantESD HBM Protection >2.5 kV

Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices. This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.