CSD75208W1015 Series

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

Catalog

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

Part	Package / Case	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD75208W1015T	6-UFBGA DSBGA	750 mW	20 V	Surface Mount	6-DSBGA (1x1.5)	1.1 V	MOSFET (Metal Oxide)	1.6 A	2 P-Channel (Dual) Common Source	68 mOhm	410 pF	Logic Level Gate	-55 °C	150 °C
Texas Instruments CSD75208W1015	6-UFBGA DSBGA	750 mW	20 V	Surface Mount	6-DSBGA (1x1.5)	1.1 V	MOSFET (Metal Oxide)	1.6 A	2 P-Channel (Dual) Common Source	68 mOhm	410 pF	Logic Level Gate	-55 °C	150 °C

Catalog

-20-V, P channel NexFET™ power MOSFET, dual Common Source WLP 1 mm x 1.5 mm, 108 mOhm, gate ESD prot

Key Features

• Dual P-Channel MOSFETsCommon Source ConfigurationSmall Footprint 1 mm × 1.5 mmGate-Source Voltage ClampGate ESD Protection –3 kVPb FreeRoHS CompliantHalogen FreeDual P-Channel MOSFETsCommon Source ConfigurationSmall Footprint 1 mm × 1.5 mmGate-Source Voltage ClampGate ESD Protection –3 kVPb FreeRoHS CompliantHalogen Free

Description

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.