CSD18543Q3A Series

60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs
Texas Instruments CSD18543Q3AT	4.5 V 10 V	12 A 60 A	8-VSONP (3x3.3)	Surface Mount	MOSFET (Metal Oxide)	66 W	60 V	-55 °C	150 °C	14.5 nC	N-Channel	1150 pF	20 V	2.7 V	8-PowerVDFN	15.6 mOhm

Catalog

60-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.9 mOhm

Key Features

• Ultra-Low Qgand QgdLow RDS(on)Low-Thermal ResistanceAvalanche RatedLead FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic PackageUltra-Low Qgand QgdLow RDS(on)Low-Thermal ResistanceAvalanche RatedLead FreeRoHS CompliantHalogen FreeSON 3.3-mm × 3.3-mm Plastic Package

Description

This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 60-V, 8.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.