CSD19531Q5A Series

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Mounting Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]
Texas Instruments CSD19531Q5A	-55 °C	150 °C	100 V	6 V 10 V	6.4 mOhm	100 A	3.3 V	3.3 W 125 W	3870 pF	20 V	48 nC	8-VSONP (5x6)	N-Channel	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)
Texas Instruments CSD19531Q5AT	-55 °C	150 °C	100 V	6 V 10 V	6.4 mOhm	100 A	3.3 V	3.3 W 125 W	3870 pF	20 V	48 nC	8-VSONP (5x6)	N-Channel	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)
Texas Instruments CSD19531KCS	-55 °C	175 ░C	100 V	6 V 10 V		100 A	3.3 V	214 W	3870 pF	20 V	38 nC	TO-220-3	N-Channel	Through Hole	TO-220-3	MOSFET (Metal Oxide)	7.7 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5 mm × 6 mm Plastic Package

Description

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. Typical RθJA= 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC= 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%