CSD18541F5 Series

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Catalog

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Mounting Type	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD18541F5T	60 V	-55 °C	150 °C	777 pF	2.2 V	65 mOhm	2.2 A	500 mW	MOSFET (Metal Oxide)	14 nC	3-SMD No Lead	3-PICOSTAR	Surface Mount	N-Channel	20 V	4.5 V 10 V

Catalog

60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra-low Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeLead and halogen freeRoHS compliantLow on-resistanceUltra-low Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeLead and halogen freeRoHS compliant

Description

This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. This 54-mΩ, 60-V, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many space constrained industrial load switch applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.