CSD19505KTT Series

80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm

Catalog

80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Texas Instruments CSD19505KTTT	TO-263 (DDPAK-3)	3.2 V	MOSFET (Metal Oxide)	200 A	N-Channel	-55 °C	175 ░C	300 W	76 nC	80 V	20 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	3.1 mOhm	6 V 10 V	Surface Mount
Texas Instruments CSD19505KTT	TO-263 (DDPAK-3)	3.2 V	MOSFET (Metal Oxide)	200 A	N-Channel	-55 °C	175 ░C	300 W	76 nC	80 V	20 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	3.1 mOhm	6 V 10 V	Surface Mount

Catalog

80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeD2PAK Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeD2PAK Plastic Package

Description

This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 80-V, 2.6-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.