CSD19532KTT Series

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Part	Supplier Device Package	Package / Case	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Texas Instruments CSD19532Q5B	8-VSON-CLIP (5x6)	8-PowerTDFN	Surface Mount	N-Channel	100 V	MOSFET (Metal Oxide)	100 A	3.1 W 195 W	4810 pF	3.2 V	-55 °C	150 °C	6 V 10 V	4.9 mOhm	20 V	62 nC
Texas Instruments CSD19532KTTT	TO-263 (DDPAK-3)	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	Surface Mount	N-Channel	100 V	MOSFET (Metal Oxide)	200 A		5060 pF	3.2 V	-55 °C	175 ░C	6 V 10 V		20 V	57 nC	5.6 mOhm	250 W

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.9 mOhm

Key Features

• Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageLow Qgand QgdLow Thermal ResistanceAvalanche RatedPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.