CSD19502Q5B Series

80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm

Catalog

80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm

Part	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD19502Q5BT	80 V	Surface Mount	20 V	4.1 mOhm	8-PowerTDFN	N-Channel	3.1 W 195 W	62 nC	-55 °C	150 °C	3.3 V	4870 pF	100 A	8-VSON-CLIP (5x6)	MOSFET (Metal Oxide)	6 V 10 V

Catalog

80-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.1 mOhm

Key Features

• Ultra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageUltra-Low Qgand QgdLow Thermal ResistanceAvalanche RatedLogic LevelPb-Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 3.4 mΩ, 80 V, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.