| FET, MOSFET Arrays | 2 | Active | |
STL60N10F7N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL62P3LLH6P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package | Single FETs, MOSFETs | 1 | Obsolete | This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL64Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package | Single FETs, MOSFETs | 2 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STL66DN3LLH5Automotive-grade dual N-channel 30 V, 5.9 mOhm typ., 20 A STripFET H5 Power MOSFET in PowerFLAT 5x6 double island package | FET, MOSFET Arrays | 1 | Active | This device is a dual N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. |
STL66N3LLH5Automotive-grade N-channel 30 V, 4.5 mOhm typ., 80 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. |
STL6N3LLH6N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL6P3LLH6P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package | FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL7N-channel 600 V, 0.92 Ohm typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x5 HV package | Transistors | 4 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
