STL6P3LLH6 Series

P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Catalog

P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Part	Technology	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STL6P3LLH6	MOSFET (Metal Oxide)	20 V	8-PowerVDFN	6 A	1 V	2.9 W	30 mOhm	12 nC	1450 pF	P-Channel	30 V	PowerFlat™ (3.3x3.3)	150 °C	Surface Mount	4.5 V 10 V

Catalog

P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.