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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Discrete Semiconductor Products | 1 | Obsolete | ||
STL70N4LLF5Automotive-grade N-channel 40 V, 6.1 mOhm typ., 18 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This N-channel Power MOSFET is developed using the STripFET™ F5 technology and has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. |
| Bipolar (BJT) | 2 | Obsolete | ||
| Single FETs, MOSFETs | 1 | Obsolete | ||
STL76DN4LF7AGAutomotive-grade dual N-channel 40 V, 5 mOhm typ., 40 A STripFET F7 Power MOSFET in PowerFLAT 5x6 double island package | FET, MOSFET Arrays | 1 | Active | This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL7DN6LF3Automotive-grade dual N-channel 60 V, 35 mOhm typ., 6.5 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package | Discrete Semiconductor Products | 1 | Active | This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. |
| Transistors | 1 | Active | ||
| Transistors | 1 | Active | ||
STL7N10F7N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | Discrete Semiconductor Products | 1 | Active | This device utilizes the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
STL7N80K5N-channel 800 V, 0.95 Ohm typ., 3.6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |