STL60N10F7 Series

N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package

Catalog

N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package

Part	Vgs (Max) [Max]	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Technology
STMicroelectronics STL60N10F7	20 V	5 W 72 W	Surface Mount	10 V	1640 pF	25 nC	175 °C	-55 °C	100 V	PowerFlat™ (5x6)	46 A	N-Channel	4.5 V	8-PowerVDFN	18 mOhm	MOSFET (Metal Oxide)

Catalog

N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.