STL8N-channel 60 V, 0.019 Ohm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | Single | 3 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| FETs, MOSFETs | 1 | Obsolete | |
STL86N3LLH6AGAutomotive-grade N-channel 30 V, 4 mOhm typ., 80 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL8DN10LF3Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package | FET, MOSFET Arrays | 1 | Active | This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. |
STL8DN6LF3Automotive-grade dual N-channel 60 V, 22.5 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. |
STL8DN6LF6AGAutomotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 double island package | FETs, MOSFETs | 1 | Active | This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL8N10LF3Automotive-grade N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in a PowerFLAT 5x6 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. |
STL8N65M2N-channel 650 V, 1 Ohm typ., 4 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package | Discrete Semiconductor Products | 1 | Obsolete | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STL8N6LF6AGAutomotive-grade N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL8N80K5N-channel 800 V, 0.8 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package | Single FETs, MOSFETs | 1 | Active | This N-channel Zener-protected Power MOSFET is designed using ST's revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. |
