STL6N3LLH6 Series

N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

Catalog

N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STL6N3LLH6	N-Channel	13 A	20 V	6-PowerWDFN	3.6 nC	PowerFlat™ (2x2)	4.5 V 10 V	Surface Mount	MOSFET (Metal Oxide)	30 V	2.4 W	25 mOhm	1 V	150 °C	-55 °C	283 pF

Catalog

N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package

Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.