STL62P3LLH6 Series

P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Catalog

P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Package / Case	Operating Temperature
STMicroelectronics STL62P3LLH6	33 nC	10.5 mOhm	Surface Mount	62 A	1 V	3350 pF	20 V	MOSFET (Metal Oxide)	4.5 V 10 V	100 W	30 V	PowerFlat™ (5x6)	P-Channel	8-PowerVDFN	175 °C

Catalog

P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.