STL45N10F7AGAutomotive-grade N-channel 100 V, 20 mOhm typ., 18 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL45N60DM6N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STL45N65M5N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package | Transistors | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STL45P3LLH6P-channel -30 V, 11 mOhm typ., -45 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package | Single FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STL47N60M6N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 1 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STL4N10F7N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package | Single FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STL4N80K5N-channel 800 V, 2.1 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STL4P3P-Channel 30 V, 0.048 Ohm typ., 4 A STripFET H6 Power MOSFET in PowerFLAT(TM) 2x2 package | Single FETs, MOSFETs | 1 | Active | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STL50DN6F7Dual N-channel 60 V, 9 mOhm typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package | Discrete Semiconductor Products | 1 | Active | This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
