SCT3030ALHR Series

650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Operating Temperature	Power Dissipation (Max) [Max]	FET Type	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Qualification	Drain to Source Voltage (Vdss)	Grade	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor SCT3030ALHRC11	175 °C	262 W	N-Channel	Through Hole	TO-247-3	39 mOhm	TO-247N	AEC-Q101	650 V	Automotive	5.6 V	70 A	1526 pF	104 nC	18 V

Catalog

650V, 70A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3030ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.