SCT3022KLHR Series

1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	FET Type	Operating Temperature	Mounting Type	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Qualification
Rohm Semiconductor SCT3022KLHRC11	N-Channel	175 °C	Through Hole	TO-247-3	427 W	28.6 mOhm	95 A	178 nC	2879 pF	TO-247N	Automotive	18 V	5.6 V	1.2 kV	AEC-Q101

Catalog

1200V, 95A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3022KLHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.