SCT3040KL Series

1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Operating Temperature	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Rohm Semiconductor SCT3040KLGC11	175 °C	Through Hole	1.2 kV	52 mOhm	55 A	107 nC	TO-247N	TO-247-3	N-Channel	5.6 V	262 W	18 V	1337 pF

1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3040KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.