SCT3022ALHR Series

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature	Qualification	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package
Rohm Semiconductor SCT3022ALHRC11	2208 pF	Automotive	133 nC	TO-247-3	339 W	Through Hole	175 °C	AEC-Q101	N-Channel	28.6 mOhm	93 A	18 V	650 V	5.6 V	TO-247N

Catalog

650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

AEC-Q101 qualified automotive grade product. SCT3022ALHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.