SCT3060AL Series

650V, 39A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

650V, 39A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Rohm Semiconductor SCT3060ALGC11	165 W	N-Channel	TO-247-3	Through Hole	650 V	18 V	58 nC	852 pF	175 °C	78 mOhm	TO-247N	39 A

650V, 39A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

SCT3060AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.