SCT3030 Series

650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Qualification	Grade	Technology
Rohm Semiconductor SCT3030ALGC11	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-3	104 nC	TO-247N	70 A	Through Hole	1526 pF	39 mOhm
Rohm Semiconductor SCT3030AW7TL	267 W		650 V	175 °C	5.6 V	N-Channel	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	104 nC	TO-263-7	70 A	Surface Mount	1526 pF	39 mOhm
Rohm Semiconductor SCT3030KLGC11	339 W	18 V	1.2 kV	175 °C	5.6 V	N-Channel	TO-247-3		TO-247N	72 A	Through Hole	2222 pF	39 mOhm	131 nC
Rohm Semiconductor SCT3030KLHRC11		18 V	1.2 kV	175 °C	5.6 V	N-Channel	TO-247-3		TO-247N	72 A	Through Hole	2222 pF	39 mOhm	131 nC	339 W	AEC-Q101	Automotive
Rohm Semiconductor SCT3030ARC14		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W
Rohm Semiconductor SCT3030ARC15		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W			MOSFET (Metal Oxide)
Rohm Semiconductor SCT3030ARHRC15		18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	70 A	Through Hole	1526 pF	39 mOhm		262 W	AEC-Q101	Automotive	MOSFET (Metal Oxide)

Catalog

650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Description

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.