FDN337N Series

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

Catalog

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)
ON Semiconductor FDN337N	30 V	1 V	65 mOhm	9 nC	Surface Mount	300 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23-3	2.2 A	2.5 V 4.5 V	500 mW	-55 °C	150 °C	N-Channel	8 V
ON Semiconductor FDN337N-F169	30 V	1 V	65 mOhm	9 nC	Surface Mount	300 pF	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	SOT-23-3	2.2 A	2.5 V 4.5 V	500 mW	-55 °C	150 °C	N-Channel	8 V

Catalog

N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ

Key Features

• 2.2 A, 30 VRDS(ON)= 0.065 Ω @ VGS= 4.5 VRDS(ON)= 0.082 Ω @ VGS= 2.5 V.

• Industry standard outline SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.

• High density cell design for extremely low RDS(ON).

• Exceptional on-resistance and maximum DC current capability.

Description

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.