FDN358P Series

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -1.5A, 125mΩ

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -1.5A, 125mΩ

Part	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
ON Semiconductor FDN358P	MOSFET (Metal Oxide)	125 mOhm	30 V	-55 °C	150 °C	20 V	1.5 A	500 mW	4.5 V 10 V	Surface Mount	SC-59 SOT-23-3 TO-236-3	3 V	182 pF	SOT-23-3	5.6 nC	P-Channel

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -1.5A, 125mΩ

Key Features

-1.5 A, -30 V

• RDS(ON)= 125 mΩ @ VGS= 10 V

• RDS(ON)= 200 mΩ @ VGS= 4.5 V.

• Low Gate Charge (4 nC typical)

• High Performance Trench Technology for Extremely Low rDS(on)

• High Power Version of Industry Standard SOT-23 Package. Identical Pin-Out to SOT-23 with 30% Higher Power Handling Capability

Description

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.