FDN340P Series

Single P-Channel Logic Level PowerTrench® MOSFET -20V, -2A, 70mΩ

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -20V, -2A, 70mΩ

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type
ON Semiconductor FDN340P	MOSFET (Metal Oxide)	779 pF	2.5 V 4.5 V	20 V	8 V	P-Channel	500 mW	1.5 V	10 nC	SC-59 SOT-23-3 TO-236-3	2 A	-55 °C	150 °C	70 mOhm	SOT-23-3	Surface Mount

Catalog

Single P-Channel Logic Level PowerTrench® MOSFET -20V, -2A, 70mΩ

Key Features

-2A, 20V

• Low gate charge (7.2 nC typical)

• RDS(ON)= 70 mΩ @ VGS= -4.5 V

• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

• Highperformance trench technology for extremelylow RDS(ON).

• RDS(ON)= 110 mΩ @ VGS= -2.5 V

Description

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.