FDN335N Series

N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ

Catalog

N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ

Part	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
ON Semiconductor FDN335N	Surface Mount	MOSFET (Metal Oxide)	310 pF	N-Channel	1.7 A	70 mOhm	5 nC	1.5 V	-55 °C	150 °C	20 V	500 mW	SC-59 SOT-23-3 TO-236-3	2.5 V 4.5 V	SOT-23-3	8 V

Catalog

N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ

Key Features

• 1.7 A, 20 V

• RDS(on)= 0.07 Ω @ VGS= 4.5 V

• RDS(on)= 0.100 Ω @ VGS= 2.5 V

• Low gate charge (3.5nC typical).

• High performance trench technology for extremely lowRDS(ON).

• High power and current handling capability.

Description

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.