FDN352AP Series

Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Catalog

Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type
ON Semiconductor FDN352AP	1.3 A	SC-59 SOT-23-3 TO-236-3	30 V	MOSFET (Metal Oxide)	4.5 V 10 V	-55 °C	150 °C	1.9 nC	Surface Mount	150 pF	500 mW	2.5 V	SOT-23-3	180 mOhm	25 V	P-Channel

Catalog

Single P-Channel PowerTrench® MOSFET -30V, -1.3A, 180mΩ

Key Features

-1.3A, -30V

• RDS(ON)= 180 mΩ @ VGS= -10V

-1.1A, -30V

• RDS(ON)= 300 mΩ @ VGS= -4.5V

• High performance trench technology for extremely low RDS(ON).

• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability

Description

This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.