FDN304PZ Series

P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -2.4A, 52mΩ

Catalog

P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -2.4A, 52mΩ

Part	Power Dissipation (Max) [Max]	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
ON Semiconductor FDN304PZ	500 mW	MOSFET (Metal Oxide)	Surface Mount	52 mOhm	1.8 V 4.5 V	8 V	SOT-23-3	SC-59 SOT-23-3 TO-236-3	20 V	-55 °C	150 °C	2.4 A	P-Channel	20 nC	1310 pF	1.5 V

Catalog

P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -2.4A, 52mΩ

Key Features

-2.4A, -20V

• RDS(ON)= 52 mΩ @ VGS= -4.5V

• RDS(ON)= 70 mΩ @ VGS= -2.5V

• RDS(ON)= 100 mΩ @ VGS= -1.8V

• Fast switching speed

• ESD protection diode

• High performance trench technology for extremelylow RDS(ON)

• SuperSOT™ -3 provides low RDS(ON)and 30% higherpower handling capability than SOT23 in the samefootprint

Description

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.