FDN327N Series

N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ

Catalog

N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor FDN327N	1.8 V 4.5 V	1.5 V	423 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount	N-Channel	2 A	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	6.3 nC	SOT-23-3	500 mW	70 mOhm	8 V

N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ

• 2 A, 20 V

• RDS(ON)= 70 mΩ @ VGS= 4.5 V

• RDS(ON)= 80 mΩ @ VGS= 2.5 V

• RDS(ON)= 120 mΩ @ VGS= 1.8 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(on)

This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.