Beta

⌘K

O

ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

...

Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

FDMS3626SAsymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET, 25V	Discrete Semiconductor Products	1	Obsolete	This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3660ASAsymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET 30V	FETs, MOSFETs	3	Active	This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
FDMS3668SAsymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET 30V	Transistors	2	Active	This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS4435BZP-Channel PowerTrench<SUP>®</SUP> MOSFET -30V, -18A, 20mΩ	Discrete Semiconductor Products	2	Active	This P-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
FDMS4D0N12CN-Channel Shielded Gate PowerTrench® MOSFET 120V, 118A, 4.0mΩ	Discrete Semiconductor Products	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS4D4N08CN-Channel Shielded Gate PowerTrench<sup>®</sup> MOSFET 80V, 123A, 4.3mΩ	Transistors	1	Active	This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMS5361	Discrete Semiconductor Products	1	Active
FDMS5361L_F085N-Channel Power Trench<sup>®</sup> MOSFET 60V, 49A, 6.7mΩ	Single	2	Active	This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS5672N-Channel UltraFET Trench<sup>®</sup> MOSFET 60V, 22A, 11.5mΩ	FETs, MOSFETs	1	Active	UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
FDMS6681ZP-Channel PowerTrench<sup>®</sup> MOSFET -30V, -122A, 3.2mΩ	FETs, MOSFETs	1	Obsolete	FDMS6681Z is not recommended for new design. Please apply NTMFS005P03P8ZT1G as a replacement.