FDMS3660AS Series

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Catalog

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	FET Feature	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
ON Semiconductor FDMS3660AS	2.7 V	Power56	Logic Level Gate	13 A 30 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount	30 nC	2 N-Channel (Dual)	30 V	1 W	2230 pF	-55 °C	150 °C	8 mOhm
ON Semiconductor FDMS3660S-F121	2.7 V	Power56	Logic Level Gate	13 A 30 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount		2 N-Channel (Dual) Asymmetrical	30 V	1 W				8 mOhm	29 nC	1765 pF
ON Semiconductor FDMS3660S	2.7 V	Power56	Logic Level Gate	30 A 60 A	MOSFET (Metal Oxide)	8-PowerTDFN	Surface Mount		2 N-Channel (Dual) Asymmetrical	30 V	1 W		-55 °C	150 °C	8 mOhm	29 nC	1765 pF

Catalog

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Key Features

• Q1: N-ChannelMax rDS(on)= 8 mΩ at VGS= 10 V, ID= 13 AMax rDS(on)= 11 mΩ at VGS= 4.5 V, ID= 11 A

• Q2: N-ChannelMax rDS(on)= 1.8 mΩ at VGS= 10 V, ID= 30 AMax rDS(on)= 2.2 mΩ at VGS= 4.5 V, ID= 27 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.