FDMS4D4N08C Series

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 123A, 4.3mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 123A, 4.3mΩ

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	FET Type
ON Semiconductor FDMS4D4N08C	80 V	6 V 10 V	20 V	Surface Mount	56 nC	8-PowerTDFN	8-PQFN (5x6) Power56	125 W	123 A	4 V	4090 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	4.3 mOhm	N-Channel

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 123A, 4.3mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.3 mΩ at VGS= 10 V, ID= 44 A

• Max rDS(on)= 10.4 mΩ at VGS= 6 V, ID= 22 A

• 50% Lower Qrrthan Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.