FDMS4D0N12C Series

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 118A, 4.0mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 118A, 4.0mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS4D0N12C	18.5 A 114 A	82 nC	MOSFET (Metal Oxide)	6460 pF	Surface Mount	4 mOhm	N-Channel	20 V	4 V	-55 °C	150 °C	6 V 10 V	8-PowerTDFN	2.7 W 106 W	8-PQFN (5x6)	120 V

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 118A, 4.0mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 4.0 mΩ at VGS= 10 V, ID= 67 A

• Max rDS(on)= 8.0 mΩ at VGS= 6 V, ID= 33 A

• 50% Lower Qrrthan Other MOSFET Suppliers

• Lowers Switching Noise/EMI

• MSL1 Robust Package Design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.