FDMS4435BZ Series

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Catalog

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	FET Type	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS4435BZ	9 A 18 A	4.5 V 10 V	2.5 W 39 W	MOSFET (Metal Oxide)	P-Channel	8-PQFN (5x6)	Surface Mount	3 V	25 V	20 mOhm	8-PowerTDFN	2050 pF	-55 °C	150 °C	30 V
ON Semiconductor FDMS4435BZ	9 A 18 A	4.5 V 10 V	2.5 W 39 W	MOSFET (Metal Oxide)	P-Channel	8-PQFN (5x6)	Surface Mount	3 V	25 V	20 mOhm	8-PowerTDFN	2050 pF	-55 °C	150 °C	30 V

Catalog

P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Key Features

• Max rDS(on)= 20 mΩ at VGS= -10 V, ID= -9.0 A

• Max rDS(on)= 37 mΩ at VGS= -4.5 V, ID= -6.5 A

• Extended VGSSrange (-25 V) for battery applications

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• HBM ESD protection level >7 kV typical(Note 4)

• 100% UIL tested

• Termination is Lead-free and RoHS Compliant

Description

This P-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.