FDMS5361L_F085 Series

N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

Catalog

N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Grade	Power Dissipation (Max)	Qualification
ON Semiconductor FDMS5352	6940 pF	8-PowerTDFN	MOSFET (Metal Oxide)	2.5 W	104 W	4.5 V 10 V	Surface Mount	60 V	3 V	N-Channel	13.6 A 49 A	20 V	8-PQFN (5x6)	-55 °C	150 °C	131 nC
ON Semiconductor FDMS5361L-F085	1980 pF	8-PowerVDFN	MOSFET (Metal Oxide)			4.5 V 10 V	Surface Mount	60 V	3 V	N-Channel	35 A	20 V	Power56	-55 °C	175 ░C	44 nC	15 mOhm	Automotive	75 W	AEC-Q101

Catalog

N-Channel Power Trench® MOSFET 60V, 49A, 6.7mΩ

Key Features

• Max rDS(on)= 6.7mΩ at VGS= 10V, ID= 13.6A

• Max rDS(on)= 8.2mΩ at VGS= 4.5V, ID= 12.3A

• Advanced Package and Silicon combination for low rDS(on)

• MSL1 robust package design

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.