FDMS3668S Series

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Catalog

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Part	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	FET Feature	Power - Max [Max]
ON Semiconductor FDMS3668S	8-PowerTDFN	30 V	8 mOhm	8-PQFN (5x6)	2 N-Channel (Dual) Asymmetrical	Surface Mount	29 nC	2.7 V	-55 °C	150 °C	13 A 18 A	1765 pF	MOSFET (Metal Oxide)	Logic Level Gate	1 W
ON Semiconductor FDMS3668S	8-PowerTDFN	30 V	8 mOhm	Power56	2 N-Channel (Dual) Asymmetrical	Surface Mount	29 nC	2.7 V	-55 °C	150 °C	13 A 18 A	1765 pF	MOSFET (Metal Oxide)	Logic Level Gate	1 W

Catalog

Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Key Features

• Q1: N-ChannelMax rDS(on)= 8 mΩ at VGS= 10 V, ID= 13 AMax rDS(on)= 11 mΩ at VGS= 4.5 V, ID= 11 A

• Q2: N-ChannelMax rDS(on)= 5 mΩ at VGS= 10 V, ID= 18 AMax rDS(on)= 5.2 mΩ at VGS= 4.5 V, ID= 17 A

• Low inductance packaging shortens rise/fall times, resulting in lower switching losses

• MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.