FDMS5672 Series

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

Catalog

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDMS5672	60 V	8-MLP (5x6) Power56	Surface Mount	20 V	11.5 mOhm	10.6 A 22 A	-55 °C	150 °C	2.5 W 78 W	8-PowerWDFN	N-Channel	2800 pF	6 V 10 V	MOSFET (Metal Oxide)	4 V	45 nC

Catalog

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

Key Features

• Max rDS(on)= 11.5mΩ at VGS= 10V, ID= 10.6A

• Max rDS(on)= 16.5mΩ at VGS= 6V, ID= 8A

• Typ Qg= 32nC at VGS= 10 V

• Low Miller Charge

• Optimized efficiency at high frequencies

• RoHS Compliant

Description

UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.