FDMS6681Z Series

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ

Catalog

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDMS6681Z	4.5 V 10 V	3.2 mOhm	P-Channel	8-PQFN (5x6)	10380 pF	-55 °C	150 °C	Surface Mount	8-PowerTDFN	2.5 W 73 W	3 V	21.1 A 49 A	25 V	241 nC	MOSFET (Metal Oxide)	30 V

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ

• Max rDS(on)= 3.2 mΩ at VGS= -10 V, ID= -21.1 A

• Max rDS(on)= 5.0 mΩ at VGS= -4.5 V, ID= -15.7 A

• Advanced Package and Silicon combination for low rDS(on)and high efficiency

• HBM ESD protection level of 8kV typical(Note 3)

• MSL1 robust package design

• RoHS Compliant

FDMS6681Z is not recommended for new design. Please apply NTMFS005P03P8ZT1G as a replacement.