FDMC6686P Series

P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ

Catalog

P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Vgs (Max)
ON Semiconductor FDMC6686P	1 V	1.8 V 4.5 V	122 nC	2.3 W 40 W	P-Channel	13200 pF	4 mOhm	18 A 56 A	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V	8-PowerWDFN	8-PQFN Power33	3.3 mm	3.3 mm	8 V

P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ

• Max rDS(on)= 4 mΩ at VGS= -4.5 V, ID= -18 A

• Max rDS(on) = 5.7 mΩ at VGS= -2.5 V, ID= -16 A

• Max rDS(on)=11.5 mΩ at VGS= -1.8 V, ID= -11 A

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability in a widely used surface mount package

• Lead-free and RoHS Compliant

This P-Channel MOSFET is produced using an advanced PowerTrench®process that has been optimized for rDS(ON), switching performance and ruggedness.