FDMC3020DC Series

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 6.25mΩ

Catalog

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 6.25mΩ

Part	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor FDMC3020DC	Surface Mount	3 W 50 W	6.25 mOhm	MOSFET (Metal Oxide)	4.5 V 10 V	8-PowerTDFN	Dual Cool ™ 33	-55 °C	150 °C	N-Channel	17 A 40 A	1385 pF	23 nC	20 V	30 V	3 V

Catalog

N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30V, 40A, 6.25mΩ

Key Features

• Dual Cool™ Top Side Cooling PQFN package

• Max rDS(on)= 6.25 mΩat VGS= 10 V, ID= 12

• Max rDS(on)= 9.0 mΩ at VGS= 4.5 V, ID= 10 A

• High performance technology for extremely low rDS(on)

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode