FDMC5614P Series

P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ

Catalog

P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ

Part	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDMC5614P	8-MLP (3.3x3.3)	-55 °C	150 °C	1055 pF	20 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	3 V	4.5 V 10 V	100 mOhm	20 nC	8-PowerWDFN	2.1 W 42 W	60 V	5.7 A 13.5 A

Catalog

P-Channel PowerTrench® MOSFET -60V, -13.5A, 100mΩ

Key Features

• Max rDS(on)= 100 mΩ @ VGS= -10 V,ID= -5.7A

• Max rDS(on)= 135 mΩ @ VGS= -4.5 V,ID= -4.4A

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low rDS(on)

• High power and current handling capability

• RoHS Compliant

Description

This P-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V).